| 摘要 |
PROBLEM TO BE SOLVED: To provide a photodiode which prevents light attenuation as much as possible until light reaches a light-receiving region, and causes electrons to behave as major carriers at an interface to prevent a drop in detection sensitivity and response speed in the light-receiving region. SOLUTION: An n-type impurity doped region 1a is formed on an Si substrate 1, and an interface to a GaN layer 2 mainly formed on a part of the Si substrate 1 that has no n-type impurity doped region 1a formed thereon serves as the light-receiving region, so that carriers are separated at this interface. The GaN layer 2 is transparent to visible light and has no pn junction made by impurity doping. This achieves high sensitivity and high stability. Receiving light at the interface between the Si substrate 1 and the GaN layer 2 generates a photocurrent which flows along the interface between the Si substrate 1 and the GaN layer 2 as a two-dimensional carrier. This offers high response performance. COPYRIGHT: (C)2010,JPO&INPIT
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