METAL GATE STRUCTURE AND METHOD OF MANUFACTURING SAME
摘要
A method of manufacturing a metal gate structure includes providing a substrate (110) having formed thereon a gate dielectric (120), a work function metal (130) adjacent to the gate dielectric, and a gate metal (140) adjacent to the work function metal; selectively forming a sacrificial capping layer (310) centered over the gate metal; forming an electrically insulating layer (161) over the sacrificial capping layer such that the electrically insulating layer at least partially surrounds the sacrificial capping layer; selectively removing the sacrificial capping layer in order to form a trench (410) aligned to the gate metal in the electrically insulating layer; and filling the trench with an electrically insulating material in order to form an electrically insulating cap (150) centered on the gate metal.
申请公布号
WO2009142982(A2)
申请公布日期
2009.11.26
申请号
WO2009US43898
申请日期
2009.05.14
申请人
INTEL CORPORATION;RACHMADY, WILLY;OZER, SOLEY;KLAUS, JASON