| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor element and production method thereof capable of enhancing the yield. <P>SOLUTION: This production method of a GaN-based semiconductor element is a production method of a GaN-based semiconductor element 10 by etching a laminate 9 of GaN-based semiconductor layers (2 to 4) to a predetermined depth through a dry-etching in which the ultimate vacuum in an etching apparatus is enhanced to 2×10<SP>-3</SP>Pa or less and the laminate 9 is etched through a dry-etching in a state in which the pressure in the etching apparatus is enhanced to a predetermined pressure by supplying a reaction gas to the etching apparatus. <P>COPYRIGHT: (C)2010,JPO&INPIT |
