发明名称 MASK PATTERN MANUFACTURING METHOD USING OPTICAL PROXIMITY CORRECTION METHOD BASED ON YIELD
摘要 <P>PROBLEM TO BE SOLVED: To provide an optical proximity correction method using a modified merit function based on yield. <P>SOLUTION: Known failure mechanisms related to layout geometries are used to derive yield functions based upon distance values between layout features, such as, edge features. In comparing the edge points on the predicted layout pattern with the corresponding point on the design layout pattern, a yield test is first undertaken before movement of the points on the predicted layout pattern to a position of higher yield. Where yield is acceptable, no further movement is made. Where incremental movement of points results in coming within acceptable proximity before acceptable yield is reached, the point is flagged for further consideration. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009276798(A) 申请公布日期 2009.11.26
申请号 JP20090196482 申请日期 2009.08.27
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 ZACH FRANZ XAVER
分类号 G03F1/08;G03F1/14;G06F17/50;H01L21/00;H01L21/027 主分类号 G03F1/08
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