SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which makes the reverse surge breakdown strength higher than before without spoiling the static characteristics.

SOLUTION: In the semiconductor device 1 having an n--type silicon carbide epitaxial layer 104, and a barrier metal layer 106, wherein a p-type impurity region 108 is formed on the surface of the n--type silicon carbide epitaxial layer 104 to include the end of the barrier metal layer 106 on the plan view, and a p++-type impurity region 110 is formed on the surface of the p-type impurity region 108 to include a part of the barrier metal layer 106 on the plan view, a p+-type impurity region 112 is formed in a partial region of the p++-type impurity region 110 on the plan view, a n--type impurity region 114 is formed in a region deeper than the interface of the p-type impurity region 108 to the p++-type impurity region 110, and an n-type impurity region 116 is formed in a region deeper than the interface of the n--type silicon carbide epitaxial layer 104 to the p-type impurity region 108.

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