PROCESS AND APPARATUS PROCESSING WAFER

摘要

PROBLEM TO BE SOLVED: To provide a process and a system for baking in a low pressure impurities to remove from a semiconductor surface before deposition. SOLUTION: Low temperature treatment consumes only a part of a heat history in a short time but has advantage of effectively removing the interfacial oxygen from a semiconductor surface. The process and system are suitable especially for the treatment of a semiconductor surface before epitaxial growth. According to an embodiment, the process is provided for treating a semiconductor substrate in which the substrate is loaded on a substrate supporter in a reaction chamber by the chemical vapor deposition method, and the pressure in the reaction chamber is reduced to a baking pressure of about 1×10-6Torr (about 133.32×10-6Pa) to 10 Torr (about 1333.22 Pa). COPYRIGHT: (C)2010,JPO&INPIT