SUBSTRATE PROCESSING METHOD

摘要

<P>PROBLEM TO BE SOLVED: To provide a substrate processing method for forming a silicon nitride film having a small etching grade against an HF system solution without raising a film forming temperature. Ž<P>SOLUTION: The substrate processing method for forming a film on a substrate held in a processing chamber repeats a predetermined number of cycles, where each one cycle includes: a first step of supplying a first processing gas containing Cl element to the processing chamber; a second step of exhausting the first processing gas from the processing chamber by supplying an inert gas to the processing chamber; a third step of supplying a second processing gas to the processing chamber to generate the thin film on the substrate; and a fourth step of exhausting the second processing gas from the processing chamber by supplying an inert gas to the processing chamber, while in the second step the inert gas is continuously supplied to the processing chamber even after exhausting the first processing gas from the processing chamber. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž