| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which reduces leakage current and contains a static type memory cell, and also to provide its manufacturing method. SOLUTION: A semiconductor memory device comprises: a plurality of memory cells; a plurality of bit lines; a plurality of word lines; and a controlling n-type transistor Tr1. The controlling n-type transistor Tr1 controls voltage potentials of the plurality of word lines or the plurality of bit lines. The plurality of memory cells have a memory cell n-type transistor Tr2 for maintaining data. The density of an n-type impurity in a gate electrode GE2 of the memory cell n-type transistor Tr2 is lower than that of an n-type impurity in a gate electrode GE1 of the controlling n-type transistor Tr1. Because a threshold voltage Vth of the memory cell n-type transistor (Transistor Tr2) is thereby raised high, a leak current of the semiconductor memory device is lowered. COPYRIGHT: (C)2010,JPO&INPIT
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