发明名称 Semiconductor device
摘要 The present invention provides a semiconductor device capable of preventing occurrence of cracking and the like, taking a large area, where wiring and the like that function as elemental devices can be arranged, within a plurality of interlayer insulation films, and reducing production cost. The semiconductor device according to the present invention has a low dielectric constant film having a dielectric constant of not less than 2.7. In the low dielectric constant film and the like, materials (e.g., a first dummy pattern, a second dummy pattern) with a larger hardness than that of the low dielectric constant film are formed at a part under a pad part.
申请公布号 US2009289373(A1) 申请公布日期 2009.11.26
申请号 US20090461134 申请日期 2009.08.03
申请人 RENESAS TECHNOLOGY CORP. 发明人 TOMITA KAZUO
分类号 H01L23/522 主分类号 H01L23/522
代理机构 代理人
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