| 摘要 |
A semiconductor device 1 comprises: a semiconductor substrate 100; first semiconductor element regions formed on the semiconductor substrate 100 in which first semiconductor elements of first conductivity type are to be formed; second semiconductor element regions formed on the semiconductor substrate 100 in which second semiconductor elements of second conductivity type are to be formed; and element separation regions 120 for separating the first semiconductor element regions and the second semiconductor element regions, wherein the first semiconductor element regions are formed at the locations higher than those of the element separation regions 120 neighboring to the first semiconductor element regions.
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