METHOD FOR FORMING MULTILAYER METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE TO IMPROVE ELECTRICAL CHARACTERISTIC AND ELECTRICAL CONDUCTIVITY

摘要

PURPOSE: A method for forming a multilayer metal interconnection of a semiconductor device is provided to improve an electrical characteristic and electrical conductivity by preventing a metal layer from being oxidized and by increasing the occupancy ratio of copper in a contact hole. CONSTITUTION: The first barrier material(2) and the first metal layer(3) are sequentially formed on a semiconductor substrate(1). The second barrier material(4) and an insulation layer(5) are formed on the resultant structure. The selected region of the insulation layer is firstly etched to expose the second barrier material. The exposed second barrier material and the insulation layer are nitridized. The nitridized second barrier material is secondly etched to form a contact hole. The second metal layer(8) is formed.