发明名称 |
ULTRAVIOLET (UV) RADIATION TREATMENT METHODS FOR SUBATMOSPHERIC CHEMICAL VAPOR DEPOSITION (SACVD) OF OZONE-TETRAETHOXYSILANE (O3-TEOS) |
摘要 |
<p>ULTRAVIOLET (UV) RADIATION TREATMENT METHODS FOR SUBATMOSPHERIC CHEMICAL VAPOR DEPOSITION (SACVD) OF OZONE-TETRAETHOXYSILANE (03-TEOS) Dielectric layers are formed on a substrate by performing Subatmospheric Chemical Vapor Deposition (SACVD) of ozone-tetraethoxysilane (03-TEOS) to form a layer of 03-TEOS on the substrate, and treating the layer of 03-TEOS with ultraviolet (UV) radiation. The UV radiation treatment can increase the tensile stress in the 03-TEOS layer by reducing the amount of water in the layer. Moreover, the UV treatment may also reduce the amount of silanol in the 03-TEOS layer, which can also increase reliability of the device.</p> |
申请公布号 |
SG156622(A1) |
申请公布日期 |
2009.11.26 |
申请号 |
SG20090067166 |
申请日期 |
2007.03.12 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD;SAMSUNG ELECTRONICS CO. LTD;INFINEON TECHNOLOGIES AG |
发明人 |
JUNG KIM JUN;WIDODO JOHNNY;JAE-EUN PARK;SCHENK ANDRE;GUTMANN ALOIS;HAMPP ROLAND |
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