| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing wiring structure capable of suitably controlling selective growth of a metal cap while eliminating lateral growth of a metal cap. SOLUTION: The method includes a step of forming a damascene structure on a dielectric layer 30, a step of filling the damascene structure with copper or copper alloy as a conductor 50', a step of recessing a surface of the conductor 50' by a cleaning process conducted in an acid environment of nitric acid, hypochlorous acid, or chromic acid to lower an upper surface of the conductor 50' than an upper surface of the dielectric layer 30, a step of forming a cobalt containing cap 54 formed of metallic cobalt, cobalt tungsten, cobalt tungsten phosphide, or cobalt tungsten boride on the recessed conductor 50' by selective growth after recessing the surface of the conductor 50', and a step of forming an etching stop layer 56 by covering the cobalt containing cap 54 and the dielectric layer 30. COPYRIGHT: (C)2010,JPO&INPIT
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