| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of forming a pattern including a fine line and space pattern accurately. SOLUTION: The method of manufacturing the semiconductor device includes a step of forming a core material on a processed material, a step of forming a coating film formed of amorphous material to cover an upper surface and side surface of the core material, a step of forming a sidewall mask on a sidewall of the core material by removing the coating film while remaining a part positioned on the side surface of the core material, a step of crystallizing the coating film before or after processing into the sidewall mask by carrying out thermal treatment before or after forming the sidewall mask from the coating film, a step of removing the core material after crystallizing the coating film before or after forming the sidewall mask and processing into the sidewall mask, a step of etching the processed material by using the sidewall mask as a mask after removing the core material. COPYRIGHT: (C)2010,JPO&INPIT
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