SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which a high resistance layer can be removed without changing the shapes of a via hole and a wiring groove. SOLUTION: Plasma treatment of the high resistance layer 12 on the surface of a copper wiring layer 1 exposed to the bottom of the via hole 10 is carried out using etching gas containing reducing gas. The reducing gas can contain at least one in a group of gas consisting of hydrogen, ammonia and hydrazine. An interlayer insulating film 6 whose Young's modulus is 7 or more GPa and whose specific inductive capacity is less than 3 is used. COPYRIGHT: (C)2005,JPO&NCIPI