METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a highly reliable semiconductor device in which generation of a junction leak current is suppressed by suppressing diffusion of metal. SOLUTION: A metal film 8 is formed on a silicon substrate 1 provided with a gate electrode 4 and a deep diffusion layer 7 becoming a source or a drain and heat treated at a low temperature to form a gate electrode 4 and a metal silicide layer 9 on the deep diffusion layer 7. Subsequently, a metal film similar to the metal film 8 is formed on the metal film 8 and the metal silicide layer 9 and heat treated at a low temperature to form a metal silicide layer further on the metal silicide layer 9. That process is repeated to form a metal silicide layer having a specified film thickness. COPYRIGHT: (C)2005,JPO&NCIPI