SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To realize source drain diffusing layer by extremely shallow rectangular high concentration impurity distribution which cannot be realized in the conventional solid-phase growth with the liquid phase growth without giving any adverse effect on the gate electrode and also realize low power consumption, large current and high-speed operation of an ultra-fine semiconductor device. SOLUTION: Contact with wiring layer for the entire part of source drain diffusing layer region is enabled by crossing a gate electrode without short-circuit with the gate electrode, by utilizing that an insulating film which is mainly formed of Al as the structural atoms has extremely large selection ratio of etching with an Si oxide film. The source drain junction of the extremely shallow rectangular high concentration impurity distribution is formed by liquidifying only the ion implantation amorphous region of the diffusing layer using the laser beam, in the wavelength which ensures deep attenuation for Si and makes difficult the direct heating of the Si itself and selectively and locally heating in direct the Si, by selectively allocating a metal film of shallow attenuation depth for the laser beam only to the contact region. COPYRIGHT: (C)2005,JPO&NCIPI