发明名称 SPUTTERING TARGET, METHOD FOR FORMING AMORPHOUS OXIDE THIN FILM USING THE SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
摘要 <p>Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface.  The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures.</p>
申请公布号 WO2009142289(A1) 申请公布日期 2009.11.26
申请号 WO2009JP59413 申请日期 2009.05.22
申请人 IDEMITSU KOSAN CO., LTD.;YANO KOKI;KAWASHIMA HIROKAZU;INOUE KAZUYOSHI 发明人 YANO KOKI;KAWASHIMA HIROKAZU;INOUE KAZUYOSHI
分类号 C23C14/34;C04B35/00;C04B35/453;C23C14/08;H01L21/363;H01L29/786 主分类号 C23C14/34
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