| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
<p>Disclosed is a semiconductor device including a field effect transistor comprising a diffusion layer and a resistance change element comprising a variable resistor layer. The semiconductor device comprises the variable resistor layer provided on the diffusion layer, a via provided on the variable resistor layer, and a wiring layer connected to the via.</p> |
| 申请公布号 |
WO2009142165(A1) |
申请公布日期 |
2009.11.26 |
| 申请号 |
WO2009JP59113 |
申请日期 |
2009.05.18 |
| 申请人 |
NEC CORPORATION;SUNAMURA, HIROSHI;ITO, KIMIHIKO |
发明人 |
SUNAMURA, HIROSHI;ITO, KIMIHIKO |
| 分类号 |
H01L27/10;H01L21/28;H01L21/768;H01L23/522;H01L29/78;H01L45/00;H01L49/00 |
主分类号 |
H01L27/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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