发明名称 FILM-FORMING METHOD AND BATTERY
摘要 <P>PROBLEM TO BE SOLVED: To provide a film-forming method capable of preventing cracks of a solid electrolyte layer and a battery utilizing the same. <P>SOLUTION: A positive electrode active material layer 1b is formed on a positive electrode collector 1a. The positive electrode active material layer 1b is heated at a temperature of around 500&deg;C to be annealed. The temperature (base material temperature) of the positive electrode active material layer 1b is retained within a range of >200&deg;C and &le;300&deg;C to form a solid electrolyte layer 3. At this time, vapor-phase growth such as vacuum deposition, sputtering, laser ablation, and ion plating is used. The solid electrolyte layer 3 contains at least one substance selected from phosphorus, silicon, germanium, and gallium, and lithium as well as sulfur. Out of them, an atom percentage of lithium is 20 to 65%. No cracks are generated at the solid electrolyte layer 3 even if it is put through a soldering reflow furnace. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009277565(A) 申请公布日期 2009.11.26
申请号 JP20080129186 申请日期 2008.05.16
申请人 SUMITOMO ELECTRIC IND LTD 发明人 IKUTA RIKIZO;MIZUNO OSAMU;AWATA HIDEAKI;KANNO TAKESHI;UEDA MITSUHO
分类号 H01M6/18;H01M10/052;H01M10/0562 主分类号 H01M6/18
代理机构 代理人
主权项
地址