| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device that has a large charge storage amount in terms of an individual memory cell and its production process. Ž<P>SOLUTION: Two or more insulating films 12 and electrode films 13 are laminated by turns on a silicon substrate 11 to form a laminated body 14. Then, a via hole 15 that goes through the laminated body 14 in a direction of lamination is formed. At this time, a side surface 15a of the part located inside the electrode film 13 in the via hole 15 is curved in a concave shape when seen from the inside of the via hole 15 at its cross-section including the central axis 15c of the via hole 15. After that, a charge storage layer 26 is formed on the side surface of the via hole 15, and a semiconductor pillar 17 is formed in the interior of the via hole 15. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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