LOCATION-RELATED ADJUSTMENT OF THE OPERATING TEMPERATURE DISTRIBUTION OR POWER DISTRIBUTION OF A SEMICONDUCTOR POWER COMPONENT, AND COMPONENT FOR CARRYING OUT SAID METHOD

摘要

Described are a method for adjusting the operating temperature of MOS power components consisting of a plurality of identical individual cells as well as a component for carrying out said method. As a characteristic feature, the gate electrode network (4) of the active chip region is subdivided into several gate electrode network sectors (B1, B2, B3) which are electrically isolated from one another by means of isolating points and to each of which a different gate voltage is fed via corresponding contacts.