| 摘要 |
<p>Provided is a process for fabricating a semiconductor device wherein an electrode is not peeled off easily from a semiconductor substrate. A front-surface electrode or the surface structure of a device is formed on the front surface of the semiconductor substrate (1). The semiconductor substrate (1) is then made thin by performing back grinding and etching on the entire back surface thereof. Subsequently, a buffer layer and a collector layer are formed on the back surface of the semiconductor substrate (1), which has been made thin, by performing ion implantation and heat treatment. Thereafter, a titanium film (12) and a nickel film are formed, as a back-surface electrode, sequentially on the back surface of the semiconductor substrate (1) by deposition or sputtering. Thereafter, electroless nickel plating and substitution gold plating are performed continuously, and a nickel plated film (14) and a substitution gold plated film (15) are formed simultaneously on the opposite sides of the front-surface electrode and the back-surface electrode of the semiconductor substrate (1), thus forming a collector electrode (9). As a preprocessing of electroless nickel plating, double zincate processing is performed on the front-surface electrode of the semiconductor substrate (1).</p> |
