| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor that is easily formed and suppresses generation of a leakage current, and a method of manufacturing the thin film transistor. <P>SOLUTION: The thin film transistor 22 includes a semiconductor layer 25 having a first region which is one of a source region and a drain region and a second region which is the other, a gate insulating layer 27, an annular gate electrode 30 formed on the gate insulating layer and having an opening 30a disposed off the first region and overlapping with the second region, an interlayer insulating film 31, a first electrode connected to the first region of the semiconductor layer, and a second electrode connected to the second region of the semiconductor layer. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
