| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent packaging distortion, that occurs near and around a ridge portion, from being concentrated, without adding any new process, in junction down packaging. Ž<P>SOLUTION: A semiconductor laser device includes: an MQW active layer 104 formed on a substrate 101; a p-type clad layer 106 formed on the MQW active layer 104 and including a ridge portion 106a; a dielectric film 108 formed by the side of the ridge portion; and an n-side ohmic electrode 109 formed on the ridge portion. The p-type clad layer 106 includes the ridge portion 106a and a flat portion 106b that is the side portion thereof and on the flat portion, a maximum value of the sum of a thickness of the dielectric film in contact with the flat portion and a thickness of the flat portion is greater than a maximum value of the thickness of the ridge portion. The dielectric film is in contact partially with a side surface of a lower part of the ridge portion, and the n-side ohmic electrode is in contact with an entire upper surface of the ridge portion and a part of a side surface of an upper part of the ridge portion. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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