| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production process of a semiconductor device for restricting an inverse short channel effect and reducing a threshold voltage of a transistor. Ž<P>SOLUTION: In the production process of the semiconductor device, a base 1 having a p-type semiconductor region 2 with nitrogen implanted in the upper face thereof is prepared, and a gate insulating film 5 and a gate electrode 6 are laminated in order sequentially on the base 1. Then, with the gate electrode 6 as a mask of, a pair of n-type source and drain regions 10 is formed in a pair of p-type pocket implantation regions 7 and out of the pocket implantation regions 7 on the upper face of the base 1. Then, a stress film 11, which applies stress to the base 1 under the gate insulating film 5 by covering the upper portion of the base 1, is laminated. After activating the source and drain region 10 by applying annealing to the base 1, the laminated stress film 11 is removed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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