| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an organic field-effect transistor which is small in secular change of electric characteristics. Ž<P>SOLUTION: The method of manufacturing the organic transistor includes steps of: forming a gate electrode 3 on a polymer substrate 2; forming a gate insulating layer 4 to cover the gate electrode 3; and forming an organic semiconductor layer 5 on the gate insulating layer 4, and also includes a step of carrying out a heat treatment under a vacuum before the step of forming the organic semiconductor layer 5. It is preferred that the step of forming the gate insulating layer 4 includes a step of coating the gate electrode 3 with a solution to form the gate insulating layer 4 and curing the solution into the gate insulating layer 4, and the step of carrying out the heat treatment under a vacuum is performed after the step of forming the gate insulating layer 4. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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