| 摘要 |
PROBLEM TO BE SOLVED: To reduce variations in electric characteristics by decreasing an off current of a thin-film transistor and by increasing an on current. SOLUTION: In a semiconductor layer for forming the channel formation region of the thin-film transistor, a first semiconductor layer including a plurality of crystal regions is disposed at the side of a gate insulating layer, a second semiconductor layer having an amorphous structure is disposed at the side of source and drain regions, and an insulating layer, which includes a thickness for preventing flow of a carrier from being interrupted, is disposed between the first and second semiconductor layers. The first semiconductor layer is provided on a surface abutting on the gate insulating layer. The second semiconductor layer is provided at a side opposite to the surface, where the first semiconductor layer abuts on the gate insulating layer. COPYRIGHT: (C)2010,JPO&INPIT |
