SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND LAMP

摘要

A semiconductor light emitting element (1) is provided with a substrate (101); an interlayer semiconductor layer (20) wherein an n-type semiconductor layer (104), a light emitting layer (105), and a p-type semiconductor layer (106) are sequentially formed on the substrate (101); and a translucent electrode layer (109) formed on an upper surface (106a) of the p-type semiconductor layer (106).  In the semiconductor element (1), a translucent electrode layer (109) contains a dopant element, and the content of the dopant element in the translucent electrode layer (109) gradually reduces toward an interface (109a) between the p-type semiconductor layer (106) and the translucent electrode layer (109).  In the translucent electrode layer (109), a diffusion region where the element constituting the p-type semiconductor layer (106) from the interface (109a) toward the inside of the translucent electrode layer (109) is formed.