| 摘要 |
Memory devices and/or methods of storing memory data bits may be provided. A memory device may include a multi-level cell (MLC) array including a plurality of MLCs, an error correction unit configured to encode data to be recorded in an MLC, where the encoded data is converted to convert the encoded data into a codeword, an error pattern analysis unit configured to analyze a first data pattern included in the codeword corresponding to an error pattern included in the codeword and a data conversion unit configured to convert the analyzed first data pattern into a second data pattern. According to the above memory devices and/or methods, it may be possible to efficiently reduce a data error that occurs when the data is stored for a relatively long period of time, thereby improving reliability.
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