发明名称 Verfahren zum Herstellen eines Substrats mit einem Hohlraum
摘要 A method for manufacturing a substrate having a cavity is disclosed. The method comprises: (a) forming a first circuit pattern on both sides of a seed layer by use of a first dry film, the seed layer being for forming a circuit pattern on both sides; (b) laminating a second dry film on the first dry film on both sides of the seed layer, the thickness of the second dry film corresponding to the depth of the cavity to be formed; (c) laminating a dielectric layer on an area outside of where the cavity is to be formed on both sides of the seed layer, the thickness of the dielectric layer corresponding to the depth of the cavity to be formed; (d) laminating on the seed layer a copper foil laminated master having a second circuit pattern; and (e) forming the cavity by peeling off the first dry film and the second dry film after removing the seed layer. The method for manufacturing a substrate with a cavity in accordance with the present invention can improve the efficiency of a substrate manufacturing process by using both sides of a seed layer to manufacture the substrate with a cavity.
申请公布号 DE102006044368(B4) 申请公布日期 2009.11.26
申请号 DE20061044368 申请日期 2006.09.20
申请人 SAMSUNG ELECTRO-MECHANICS CO. LTD. 发明人 JUNG, HOE-KU;KANG, MYUNG-SAM;PARK, JUNG-HYUN
分类号 H01L21/48;H01L21/52;H01L23/055;H01L23/12 主分类号 H01L21/48
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