METHODS FOR PRODUCING SILICON SINGLE CRYSTAL AND SILICON WAFER AND SILICON WAFER PRODUCED BY THE METHOD

摘要

<P>PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal where a silicon wafer not having a low oxygen region at the circumferential portion of the wafer, having more uniform distribution of oxygen concentration in a wafer surface and having a diameter of 450 mm can be formed. Ž<P>SOLUTION: The method for producing the silicon single crystal in which a silicon molten liquid 13 is stored in a quartz crucible 12 placed in a chamber 11 in a silicon single crystal pulling apparatus 10 and a rod silicon single crystal 15 is pulled from the silicon molten liquid 13 stored in the quartz crucible 12 includes a pulling step so that the diameter of the silicon single crystal 15 is 458 mm plus α mm (wherein, 0≤α≤11) and a step to perform the outside diameter grinding of the outer periphery of the pulled silicon single crystal 15 to a diameter leaving a working margin in a wafer working step. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž