SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element which has favorable crystallinity and has high performance with respect to S value. SOLUTION: A single crystal semiconductor substrate including an embrittlement layer is attached to a base substrate with an insulating layer interposed therebetween, and the single crystal semiconductor layer is separated at the embrittlement layer by heat treatment; accordingly, a single crystal semiconductor layer is fixed over the base substrate. The single crystal semiconductor layer is irradiated with a laser beam so that the single crystal semiconductor layer is partially melted and then is re-single crystallized, whereby crystal defects are removed. In addition, an island-shaped single crystal semiconductor layer for forming an n-channel transistor is channel-doped using a photomask and then is etched back using the photomask so that the island-shaped single crystal semiconductor layer for forming an n-channel transistor is thinner than an island-shaped single crystal semiconductor layer for forming a p-channel transistor. COPYRIGHT: (C)2010,JPO&INPIT