| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for measuring positions of patterns on the front and back faces of a substrate and a measurement apparatus, capable of accurately measuring a positional misalignment of a mark or the like on front and back faces of a photomask substrate even if a normal of the photomask substrate is shifted relative to a rotating shaft (line O-O') of a measuring stage. Ž<P>SOLUTION: The method for measuring positions of patterns on the front and back faces of the photomask substrate 1, wherein a positional misalignment between a pattern formed on the front face of the photomask substrate 1 and a pattern formed on the back face of the photomask substrate 1 is measured, comprises: a positional misalignment amount measuring step for obtaining a positional misalignment amount between the patterns on the front face and the back face of the photomask substrate 1 by two times of measurements before and after a measuring stage 10 is rotated by 180° on the rotatable measuring stage 10; an angular difference measuring step for obtaining an angular difference between a normal of the photomask substrate 1 and a rotational axis of the measuring stage 10; and the step of calculating a true value of the positional misalignment amount for calculating a true positional misalignment amount from the positional misalignment amount and the angular difference. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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