发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
A silicon-germanium non-formation region not formed with a silicon germanium layer and a silicon-germanium formation region formed with a silicon germanium layer are provided in a silicon chip, an internal circuit and an input/output buffer are arranged in the silicon-germanium formation region, and a pad electrode and an electrostatic protection element are arranged in the silicon-germanium non-formation region.
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申请公布号 |
US2009289310(A1) |
申请公布日期 |
2009.11.26 |
申请号 |
US20090401698 |
申请日期 |
2009.03.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIRAOKA TAKAYUKI;FUKUDA TOSHIKAZU |
分类号 |
H01L27/088;H01L21/336;H01L29/417 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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