发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A copper interconnection layer is formed in an interconnection trench at a surface of an interlayer insulating film. A diffusion preventing insulating film is formed to cover the copper interconnection layer and is made of at least one of SiC and SiCN. An insulating film is formed on the copper interconnection layer with the diffusion preventing insulating film interposed and is made of SiN.
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申请公布号 |
US2009289367(A1) |
申请公布日期 |
2009.11.26 |
申请号 |
US20090472100 |
申请日期 |
2009.05.26 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
KODAMA DAISUKE;FUKUI SHOICHI;MIYAZAKI HIROSHI;MURATA TATSUNORI |
分类号 |
H01L23/522;H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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