RESISTANCE CHANGE NONVOLATILE MEMORY DEVICE

摘要

Provided is a resistance change nonvolatile memory device which enables the optimization of the size of a transistor of a memory cell. The resistance change nonvolatile memory device comprises a memory cell (300) constituted by connecting in series a resistance change element (309) including a lower electrode (309a), an upper electrode (309c), and a resistance change layer (309b) which reversibly changes according to electrical signals of different polarities applied between both the electrodes, and a transistor (317) including a semiconductor substrate (301) and two N-type diffusion layer regions (302a, 302b). The resistance change layer (309b) contains an oxygen-deficient oxide of transition metal, the lower electrode (309a) and the upper electrode (309c) are formed of materials composed of different elements, the standard electrode potential V1 of the lower electrode (309a), the standard electrode potential V2 of the upper electrode (309c), and the standard electrode potential Vt of the transition metal satisfy the relations of Vt2 and V12, and the lower electrode (309a) and the N-type diffusion layer region (302b) are connected.