发明名称 |
NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
A nonvolatile memory device including a plurality of word lines; a plurality of bit lines intersecting the word lines; a plurality of memory cells corresponding to intersections of the word lines and the bit lines; a common control gate line commonly connected to the memory cells; and a common erasing gate line commonly connected to the memory cells.
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申请公布号 |
US2009290417(A1) |
申请公布日期 |
2009.11.26 |
申请号 |
US20090348185 |
申请日期 |
2009.01.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK MYOUNG-KYU;KIM BYUNG-SUN;LEE TAE-JUNG;CHANG DONG-RYUL |
分类号 |
G11C16/04;H01L29/788 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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