发明名称 |
Memory Cells, Memory Cell Constructions, and Memory Cell Programming Methods |
摘要 |
Some embodiments include memory cells including a memory component having a first conductive material, a second conductive material, and an oxide material between the first conductive material and the second conductive material. A resistance of the memory component is configurable via a current conducted from the first conductive material through the oxide material to the second conductive material. Other embodiments include a diode comprising metal and a dielectric material and a memory component connected in series with the diode. The memory component includes a magnetoresistive material and has a resistance that is changeable via a current conducted through the diode and the magnetoresistive material. |
申请公布号 |
US2009290407(A1) |
申请公布日期 |
2009.11.26 |
申请号 |
US20080125756 |
申请日期 |
2008.05.22 |
申请人 |
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发明人 |
MOULI CHANDRA |
分类号 |
G11C11/00;G11C11/34;H01L29/06 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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