| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for controlling the threshold voltage of a semiconductor element capable of suppressing a variation between elements and a variation caused by various causes of the threshold voltage of the semiconductor element and operating a semiconductor device stably. <P>SOLUTION: The method of controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component comprises the processes of measuring a characteristic value serving as an index of the threshold voltage or the threshold voltage of the semiconductor element, determining the irradiation intensity, irradiation time, or wavelength of light with which the semiconductor is irradiated based on the characteristic value serving as the index of the threshold voltage or the threshold voltage measured, and irradiating the semiconductor with light having determined irradiation intensity, irradiation time, or wavelength. The light with which the semiconductor is irradiated is light having a longer wavelength than the absorption edge wavelength of the semiconductor. The threshold voltage of the semiconductor element is changed by irradiation with the light. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
