| 摘要 |
PROBLEM TO BE SOLVED: To prevent unnecessary charges from flowing into a photoelectric conversion part in a charge accumulation period when driving a CMOS solid-state image pickup device wherein an element isolation means comprises a diffusion layer and an insulating film thereon. SOLUTION: At least, a potential of a source-drain region 49 of a transistor of one pixel which is adjacent to photoelectric conversion parts (38 and 39) of another pixel with an element isolation means 85 therebetween is set so as not to become 0V within the charge accumulation period when charges are accumulated in the photoelectric conversion parts, and each pixel is driven. COPYRIGHT: (C)2010,JPO&INPIT
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