| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that it has been difficult to form a high-concentration p-type well region for maintaining high breakdown voltage and a low-concentration p-type well region for providing low resistance independently by a simple manufacturing method due to the tapered shape of an implantation mask and the spread in the lateral direction of implanted elements in the case of manufacturing a MOSFET using silicon carbide by using ion implantation. SOLUTION: By performing ion implantation by using a first implantation mask 4 having an opening part with a width Lp, a high-concentration p-type well region 6 is formed. Then, ion implantation using a second implantation mask 8 having an opening part with a width Ln (desirably, the value obtained by adding the twofold value of the spreading range in the lateral direction of ions in the region 6 to the width Lp) larger than the width Lp is performed to form an n-type source region 7. On that, a low-concentration p-type well region 9 is formed in a region 2 that is the peripheral part of the end part of the n-type source region 7 and becomes a channel by ion implantation using the mask 10. COPYRIGHT: (C)2010,JPO&INPIT
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