| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production method of a silicon single crystal, by which a silicon single crystal having uniform carbon concentration and BMD (bulk micro-defects) uniformly formed therein can be produced, and to provide a silicon single crystal wafer produced from a silicon single crystal produced by the method, the wafer having BMD uniformly formed within the wafer plane and having a uniform gettering ability. Ž<P>SOLUTION: The production method of a silicon single crystal 1 by Czochralski method by doping with carbon is disclosed, wherein the crystal 1 is grown by controlling the difference between an average growing rate of the crystal center portion 15 within a plane perpendicular to the crystal growth direction and an average growing rate of the crystal peripheral portion 16 to be within ±0.1 mm/min during growing the crystal. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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