| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a parasitic transistor causing a malfunction to a control circuit is prevented from turning ON even when a negative potential is induced to an output terminal. SOLUTION: In the semiconductor device in which a control circuit region 2 and a power transistor region 1 are formed, a first dummy region 4 is formed between a ground side transistor 11 composing a push-pull circuit and the control circuit region 2 while a second dummy region 6 is formed between the ground side transistor 11 and an end 5 of a semiconductor substrate 3. The first and second dummy regions 4 and 6 have a conductive type different from that of the semiconductor substrate 3. The second dummy region 6 is connected electrically to a semiconductor substrate part 9 between the ground side transistor 11 and the first dummy region 4. COPYRIGHT: (C)2006,JPO&NCIPI
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