ELECTROPLATING COMPOSITION AND PROCESS FOR COATING A SEMICONDUCTOR SUBSTRATE USING SAID COMPOSITION

摘要

One subject of the present invention is an electroplating composition intended in particular for coating a semiconductor substrate with copper, serving to fabricate structures of the "through-via" type for producing interconnects in integrated circuits. According to the invention, said solution contains copper ions with a concentration between 14 and 120 mM and ethylenediamine, the ethylenediamine/copper molar ratio being between 1.80 and 2.03 and the pH of the electroplating solution being between 6.6 and 7.5. Another subject of the present invention is the use of said electroplating solution for depositing a copper seed layer and the process for depositing a copper seed layer using the electroplating solution according to the invention.