| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor capable of efficiently executing characteristic improvement by hydrogenation of a semiconductor layer, and to provide its manufacturing method. SOLUTION: An SiN film is formed on an insulating substrate 1 as a base film 2 by a 300 nm plasma CVD method. An Si film (Si<SB>1-X</SB>Ge<SB>X</SB>, 0.01≤X≤0.3) including Ge is formed as a semiconductor layer 3 on the SiN film. Heat treatment is executed after forming an SiN film including hydrogen. Consequently, a processing time can be reduced. In this way, efficiency of hydrogen termination is improved by applying the Si film including Ge to the semiconductor layer in the thin-film transistor. The SiN film including hydrogen is applied to the semiconductor layer. Accordingly, a heat treatment processing time required for the hydrogen termination can be reduced and productivity can be improved. As a result, the inexpensive thin-film transistor can be obtained. COPYRIGHT: (C)2006,JPO&NCIPI
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