发明名称 |
JUNCTION BARRIER SCHOTTKY DIODES WITH CURRENT SURGE CAPABILITY |
摘要 |
<p>An electronic device includes a silicon carbide drift region having a first conductivity type, a Schottky contact on the drift region, and a plurality of junction barrier Schottky (JBS) regions at a surface of the drift region adjacent the Schottky contact. The JBS regions have a second conductivity type opposite the first conductivity type and have a first spacing between adjacent ones of the JBS regions. The device further includes a plurality of surge protection subregions having the second conductivity type. Each of the surge protection subregions has a second spacing between adjacent ones of the surge protection subregions that is less than the first spacing.</p> |
申请公布号 |
WO2009142721(A1) |
申请公布日期 |
2009.11.26 |
申请号 |
WO2009US03089 |
申请日期 |
2009.05.19 |
申请人 |
CREE, INC.;ZHANG, QINGCHUN;RYU, SEI-HYUNG |
发明人 |
ZHANG, QINGCHUN;RYU, SEI-HYUNG |
分类号 |
H01L29/872;H01L29/06;H01L29/861 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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