| 摘要 |
PURPOSE: A chemical vapor deposition apparatus is provided to implement excellent thin film growth by control a reaction gas flowing into the reaction chamber to be uniformly through a variable air controlling unit. CONSTITUTION: A chemical vapor deposition apparatus comprises a reaction chamber, a susceptor, a rotation driving unit, a gas inlet, a gas outlet, and a variable air controlling unit. The susceptor is included in the reaction chamber, and a plurality of wafers is loaded in the susceptor. The rotation driving unit rotates the susceptor. The reaction gas is entered from the outside of the reaction chamber to the internal center of the reaction chamber. The variable air controlling unit is included between the gas inlet and the gas outlet. The variable air controlling unit has gas spray plates which have a plurality of holes(131a,132a) in it are overlapped with each other.
|
