METHOD OF MANUFACTURING METAL WIRING FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a metal wiring for a semiconductor device is provided to prevent electrical characteristic degradation of a semiconductor device such as breakdown voltage by prevent conduction between copper layers. CONSTITUTION: A method of manufacturing a metal wiring for a semiconductor device is comprised of the steps: forming an insulating layer(104) having a region for a wire on the semiconductor substrate(102); forming a metal layer(108) on the insulating layer in order to fill in the region for wire; removing a metal layer until the insulating layer is exposed to the outside; and flowing a gas including F on the surface of the insulating layer and metal layer(110).