| 摘要 |
A p-type collector layer is formed on a reverse side of an n-type high-resistivity first base layer, a p-type second base layer is formed on an obverse side of the first base layer, an emitter layer is formed on the second base layer, gate electrodes are formed inside trenches extending in a direction and intruding through the emitter layer and the second base layer into intermediate depths of the first base layer, with gate insulating films in between, a collector electrode is connected to the collector layer, an emitter electrode is connected to the emitter layer, the first base layer and the second base layer, the emitter layer is composed of first emitter layers extending along the trenches in the direction, and second emitter layers extending in a perpendicular direction for a ladder form interconnection between first emitter layers, and the base contact layer has a higher impurity density than the second base layer, and envelopes the second emitter layers.
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